IXYS Debuts AlGaAs/InGaAs-Based Low Noise pHEMT Devices

MicroWave Technology, a wholly owned subsidiary of IXYS Corporation, has stated that it has unveiled a family of AlGaAs/InGaAs-based low noise pHEMT devices for microwave applications up to 38 GHz.

The newly released low noise devices are MwT-LN240, MwT-LN300 and MwT-LN600 and they are fabricated using high reliability AlGaAs/InGaAs pHEMT (pseudomorphic High Electron Mobility Transistor) process with a nominal 0.15 micron gate length and gate widths of 240 um, 300 um, and 600 um, respectively.

According to the company, the MwT- LN240 is a super low noise, quasi-enhancement-mode pHEMT whose nominal 0.15 micron gate length and 240 micron gate width makes it ideally suited for applications requiring very low noise figure and high associated gain up to 30 GHz. The LN300 has a 300 micron gate width and the LN600 has a 600 micron gate width. The devices are also suited for wideband (e.g. 6 to 18 GHz) and narrow-band applications and each of their wafers can be screened to meet the high quality and reliability requirements for space and military application.

These devices are also available in surface mount packages such as MwT-71 package. The complete noise models such as "gamma opt" and noise parameters over frequency range are available for these devices to aid circuit design simulations.

According to the company, these low noise pHEMT devices are targeted at apps like broadband military EW and defense communications, wireless communication infrastructures, point-to-point microwave radios, space/high rel, instrumentation and medical equipment.

In related news, IXYS introduced new LED driver ICs for photo flash application and announced acquisition of Zilog.