Samsung (
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Productivity of the new devices is 60 percent higher than DDR2 devices of an equivalent density, with 50 nanometer (nm) class circuit technology, The new 2Gb DDR3-based modules allows use of up to 16 gigabyte (GB) RIMMs (registered in-line memory modules), saving over 40 percent of the power of 1Gb DDR3 memory modules.
“We have focused on maximizing density alternatives and power savings to make our 2Gb DDR3 solution as flexible as possible for designers,” said Jim Elliott, vice president, Memory, Samsung Semiconductor, Inc.
The device’s small form factor allows the use of up to 8GB of memory chips for RIMMs (registered in-line memory modules), also 4GBs for SODIMMs (small outline dual in-line memory modules) and UDIMMs (unregistered in-line memory modules), with no stacking components. The 2Gb DDR3 RIMMs can also be designed to 16GBs by dual-die packages.
The monolithic 2Gb chips are energy-efficient solutions for high-density, high-performance memory applications, reducing power consumption by 40 percent. The previous dual-chip solutions had two 1Gb memory devices. The 2Gb device supports a data rate of up to 1.3 gigabits per second (Gbps) at 1.5 or 1.35 volts, up to 1.6-times faster than a 800Mbps 1Gb-based dual-die package. There are less heat emissions due to lesser DDR3 chips.
Samsung’s DRAM innovation began with 150nm-class DRAM technology in 2000, to volume production of 1Gb DDR2 with 50nm-class process technology in April2007.
DDR3 is expected to account for 29 percent of the total DRAM market in units sold and reach a 72 percent market share by 2011, according to market research firm IDC (
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Samsung Electronics Co. is a provider of semiconductor, telecommunication, digital media and digital convergence technologies. The company has four main business units of Digital Media Business, LCD Business, Semiconductor Business, and Telecommunication Business.
Anamika Singh is a contributing editor for TMCnet. To read more of Anamika's articles, please visit her columnist page.Edited by
Tim Gray