TriQuint’s new GaN benchmark supports reliable integrated RF solutions that use less power, are compact, and serve wide frequency ranges.
TriQuint continues to have high-power RF semiconductors with a wide-ranging portfolio of gallium nitride (GaN) products, complemented by its proven high-frequency 0.25-micron GaN on SiC foundry services.
TriQuint is committed to providing world-class GaN product innovation from DC to 18 GHz, including discrete transistors, MMICs and packaged solutions, supported by a unique ability to integrate and package single and multiple die in secure, U.S. facilities.
Demand for GaN technology is growing worldwide, and the solution is RF innovation from TriQuint Semiconductor.
GaN Delivers HPA Performance with high-power density, excellent gain and efficiency, robust operation and long pulse capability, and high operating voltage for reduced system current.
“We’re pleased to announce this new GaN reliability milestone,” stated James L. Klein, vice president and GM for Infrastructure and Defense Products.
“The achievement supports our foundry services and helps us accelerate product development. We are delivering more products and services than ever before,” Klein added.
TriQuint’s TQGaN25 process, can operate up to 40 Volts, and has achieved a mean time to failure (MTTF) of greater than 10 million hours at 200 degrees (C) and greater than 1 million hours at 225 degrees (C). This was achieved by Generation II 0.25-micron GaN on SiC (silicon carbide) process utilized for GaN product solutions and foundry services.
TriQuint achieved its new GaN performance through in-house development programs. This new reliability also supports objectives of TriQuint’s Defense Production Act (DPA) Title III contract that is funded by the Department of Defense Tri-Services laboratories including the U.S. Air Force, Army and Navy.
These enhancements support greater affordability of next-generation AESA (active electronically scanned array) radars, new EW systems and commercial applications.
TriQuint announced the reliability of its TQGaN25 process in connection with the Defense Manufacturing Conference (DMC), November 26-29 in Orlando, Florida.
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