The first five parts introduced are the 60V STP260N6F6 and STH260N6F6-2, the 75V STP210N75F6 and STH210N75F6-2, and the 80 V STL75N8LF6.
These five parts use ST's latest-generation DeepGATE trench MOSFET structure to achieve amongst the industry's lowest on-state resistance per die area for this type of device, said company officials.
Since the STripFET VI DeepGATE power MOSFETs can withstand maximum voltages of up to 80V, the new technology can be used in solar applications such as micro-inverters, telecommunications, networking and power supplies for servers.
In 48V telecom applications, the high voltage ratings permit reliable operation to deliver efficiency gains that help operators reduce network running costs. Moreover, consumer power supplies are expected to draw less energy. Company officials said that they’ll also operate at lower temperatures for improved user comfort and longer life.
Some of the major features include 60V and 80V breakdown voltage; 0.0016 Ohm on-state resistance – STH260N6F6-2p; 180A current rating – STx260F6N6; and 100 percent avalanche rated.
The STP260N6F6 and STP210N75F6 in the through-hole TO-220 package are now available, and also STH210N75F6-2 and STH260N6F6-2 in the surface-mount H2PAK-2 package are available. STL75N8LF6’s samples in the PowerFLAT 5x6 package are expected to be available in Q3 2011.
Last month, STMicroelectronics unveiled the new STW82100B series of integrated devices that can be used by wireless infrastructure equipment manufacturers to build low-cost flexible and compact next-generation mobile network basestations.
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