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TMCNet:  Toshiba Introduces ESD Protection Diodes for High-Speed Interfaces in Mobile Devices

[July 12, 2017]

Toshiba Introduces ESD Protection Diodes for High-Speed Interfaces in Mobile Devices

IRVINE, Calif., July 12, 2017 /PRNewswire/ -- Toshiba America Electronic Components, Inc. (TAEC)* today announced that it has introduced a new lineup of multi-bit, low-capacitance electrostatic discharge (ESD) protection diodes[1] for high-speed interfaces. Suitable for use in mobile devices, including smart phones, tablets and wearable devices, the new diodes deliver excellent protection performance and support interfaces including USB 3.0/3.1 and HDMI. The new devices simultaneously deliver low capacitance, low dynamic resistance and high ESD endurance. Minimum signal distortion of high-speed data signals is guaranteed by the ultra-low capacitance of 0.2pF, while a typical dynamic resistance of RDYN=0.5O ensures low clamping voltages. High ESD protection levels are supported by electrostatic discharge voltages of at least �20 kV according to IEC61000-4-2.

Toshiba's new multi-bit, low-capacitance ESD protection diodes are designed for high-speed interfaces in mobile devices.

The continuous growth of data traffic � driven by smart phones, wearables and applications such as virtual reality and the internet of things � has led to increasing numbers of high-speed interfaces that need to be protected from ESD events. Toshiba's new lineup of ESD protection diodes consists of five products for 3.3V signal lines and five products for 5.0V signal lines, allowing design engineers to select the appropriate match for the interface voltage of their device. The new diodes are fabricated with Toshiba's newly developed EAP-IV process[2], which utilizes Toshiba's proprietary snapback technology. This improves dynamic resistance, which absorbs ESD and noise, by approximately 50 percent compared to Toshiba's existing products[3]. ESD voltage is improved by approximately 75 percent when compared to existing products[3], which can contribute to system reliability improvements.

The new lineup of ESD protection diodes is available in three different package sizes to meet mounting space requirements. The small SOD-962 package is suitable for multi-port applications that are expected to grow, such as USB Type-C�[4]; the flow-through DFN10 (2.5�1.0mm) package can reduce the inductance of wires; and the SOD-882 (CST2) (1.0�1.6mm) package can contribute to slimmer, smaller devices.

Main Specifications
(@Ta=25�C)



Part number

Internal connection

Absolute maximum ratings

Working peak reverse voltage VRWM

max (V)

Dynamic resistance [6] RDYN typ. (?)

Clamp voltage[5] VC typ. (V)

Total capacitance Ct typ.

@VR=0V,

f=1MHz (pF)

Package (Toshiba's package name)

Electrostatic discharge VESD

(kV)

@ITLP

=16A

@ITLP

=30A

DF2B5M4SL

Bi-direction

�20

3.6

0.5

17

24

0.2

SOD-962
(SL2)

DF2B5M4CT[6]

SOD-882
(CST2)

DF2S5M4SL

Single- direction

0.3

14

18.5

0.35

SOD-962
(SL2)

DF2S5M4CT[6]

SOD-882
(CST2)

DF5G5M4N

Bi-direction

0.5

17

24

0.2

DFN5

DF10G5M4N

DFN10

DF2B6M4SL

5.5

0.5

18

25

0.2

SOD-962
(SL2)

DF2B6M4CT[6]

SOD-882
(CST2)

DF2S6M4SL

Single- direction

0.3

14

18

0.35

SOD-962
(SL2)

DF2S6M4CT[6]

SOD-882
(CST2)

DF5G7M2N

Bi-direction

1.0

36

50

0.2

DFN5

DF5G6M4N

0.5

18

25

0.2

DF10G6M4N

DFN10

Pricing and availability
The new ESD protection diodes are available now. For more details, samples and pricing information, please contact your local Toshiba Sales Office.

Notes
[1] ESD Protection Diode: Electrostatic Discharge Protection Diodes
[2] Toshiba's original process: ESD Array Process IV
[3] Existing product DF2B7M2SL (EAP-II process)
[4] USB Type-C is a trademark of the USB Implementers Forum
[5] (IEC61000-4-2) (Contact)
[6] TLP parameters: Z0=50O, tp = 100ns, tr=300ps, averaging window: t1=30ns to t2=60 ns

*About TAEC

Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, VARs, distributors and fabless chip companies worldwide.� A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, solid state drives (SSDs), hard disk drives (HDDs), solid state hybrid drives (SSHDs), discrete devices, custom SoCs/ASICs, imaging products, microcontrollers, wireless components, mobile peripheral devices, and advanced materials that make possible today's leading smartphones, tablets, cameras, medical devices, automotive electronics, industrial applications, enterprise solutions and more.

Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor, solid state drive and hard disk drive manufacturer and the world's seventh largest semiconductor manufacturer (Gartner, 2015 Worldwide Semiconductor Revenue, January, 2016). Founded in Tokyo in 1875, Toshiba is at the heart of a global network of over 550 consolidated companies employing over 188,000 people worldwide (as of March 31, 2016). Visit Toshiba's web site at http://toshiba.semicon-storage.com.

Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications.����������

MEDIA CONTACT:
Dena Jacobson
Lages & Associates
Tel.: (949) 453-8080
dena@lages.com

Toshiba Corporation logo (PRNewsFoto/Toshiba America Electronic) (PRNewsfoto/Toshiba America Electronic Comp)

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SOURCE Toshiba America Electronic Components, Inc.


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