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TMCNet:  How 3D NAND Stacks Up - Alternatives & Status of the Major Players in the Industry

[January 22, 2014]

How 3D NAND Stacks Up - Alternatives & Status of the Major Players in the Industry

(M2 PressWIRE Via Acquire Media NewsEdge) Dublin - Research and Markets (http://www.researchandmarkets.com/research/rtg4jz/how_3d_nand) has announced the addition of the "How 3D NAND Stacks Up" report to their offering.

The NAND flash industry is at a technology inflection point. Planar floating gate NAND flash memory is facing fundamental scaling challenges with the upcoming 16nm node the last generation of planar technology. What's next? Samsung's August 2013 announcement of the production of a 24-layer vertical string V-NAND shows the way forward. Vertical NAND or 3D NAND promises to continue increases in storage capacities and lower cost per bit necessary to enable emerging applications such as solid state drives and cold flash.

In the 2D planar era, the basic underlying floating gate technology (with a few exceptions) was essentially the same amongst all the NAND flash manufacturers. However in the 3D era, all NAND flash memory manufacturers are developing different 3D architectures.

How 3D NAND Stacks Up compares the 3D NAND alternatives and provides an independent view of the challenges, advantages and disadvantages of the various implementations and illuminates the 3D NAND status of the major industry players.

Key Topics Covered: 1. Contents 2. List of Figures 3. List of Tables 4. Executive Summary 5. Introduction 6. NAND Flash Memory 7. NAND Flash Memory Technology Evolution - Floating Gate Memory Cell Scaling Challenges - Program Voltages and WL-WL Dielectric Breakdown - Number of Floating Gate Electrons, Charge Cross-talk, and Random Telegraph Noise - IPD Scaling of Electrical Thickness and Program Saturation: Can a Planar Cell be a Solution? - NAND alternative: Charge Trapping Memory Cell 8. 3D NAND Alternatives - Samsung Stacking by Single Crystal Deposition - Vertical gate - Macronix TFT - Samsung VG-NAND - Toshiba BiCS - Samsung TCAT - Hynix Vertical Cylindrical Floating-gate - SK Hynix SMArT - Stacked Memory Array Transistor - Samsung VSAT - Vertical Stacked Array Transistor 9. Comparison of 3D Memory Concepts - Cell Size - Disturbs - Cell Efficiency - Number of Bits per cell Capability - Yield - Performance - Endurance - Retention - Power Consumption - Stackability - Summary 10. Outlook - 3D NAND Status - Intel/Micron - Macronix - Samsung - SanDisk/Toshiba - SK Hynix - 3D NAND Roadmap - 3D NAND Cost Trend 11. References For more information visit http://www.researchandmarkets.com/research/rtg4jz/how_3d_nand CONTACT: Research and Markets, Laura Wood, Senior Manager.

press@researchandmarkets.com Fax from USA: 646-607-1907 Fax from rest of the world: +353-1-481-1716 Sector: Computing and Technology (http://www.researchandmarkets.com/categories.asp?cat_id=4&campaign_id=rtg4jz) .

(c) 2014 M2 COMMUNICATIONS

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