|[February 26, 2013]
Efficient Power Conversion (EPC) to Present Gallium Nitride (GaN) Technology and Applications at the 2013 Applied Power Electronics and Exposition Conference (APEC®)
EL SEGUNDO, Calif. --(Business Wire)--
Efficient Power Conversion Corporation, the world's leader in
enhancement-mode gallium nitride on silicon (eGaN®) power
FETs, will be presenting an educational seminar and several
application-focused technical presentations at APEC 2013. The conference
will be held in Long Beach, California from March 17th
through the 21st.
The Premier Event in Applied Power Electronics™, APEC, focuses on the
practical and applied aspects of the power electronics business. It is
the leading conference for practicing power electronics professionals
addressing a broad range of topics in the use, design, manufacture and
marketing of all kinds of power electronics components and equipment.
For more information on APEC go to: http://www.apec-conf.org/.
"We are honored that the technical review committee of APEC 2013 has
selected EPC experts to conduct an educational seminar and to give
technical papers focusing on GaN technology at their annual conference.
This selection supports our belief that the superior performance of GaN
technology has gained the interest and acceptance of power system design
engineers," said Alex Lidow, EPC's co-founder and CEO.
Educational Seminar: GaN
Transistors for Efficient Power Conversion
Sunday, March 17
(S.7, 2:30 p.m. - 6:00 p.m.)
Expanding on the GaN
FET technology textbook written by EPC, this seminar will explain
how GaN High Electron Mobility Transistors (HEMT) work. This session
will discuss how to use these devices including showing the
drivers, layout, and thermal considerations for high performance and
high frequency power conversion. To showcase the real-world value of GaN
technology, several applications including high frequency envelope
tracking (ET), Intermediate Bus Converters (IBC), and wireless power
transmission will be presented. The seminar will conclude with a look at
the future of this emerging displacement technology.
Technical Presentations Featuring GaN FETs by EPC Experts:
of a High Frequency, Low Loss�eGaN�Converter with Reduced
Presenters: David Reusch, Johan
Wednesday, March 20 (DC-DC Converters, 2:00 p.m. -
for Envelope Tracking"
Presenter: Johan Strydom
March 20 (IS2.2.4, 8:30 a.m. - 10:15 a.m.)
Enable Low Power High Frequency Wireless Energy"
Michael de Rooij
Wednesday, March 20, (IS2.2.3, 8:30 a.m. -
based HF Resonant Converter"
Presenter: David Reusch
March 21 (IS1.4.5, 8:30 a.m. - 11:30 a.m.)
EPC is the leader in enhancement mode gallium nitride based power
management devices. EPC was the first to introduce enhancement-mode
gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in
applications such as servers,
power transmission, envelope
tracking, RF transmission, power-over-ethernet
(PoE), solar micro inverters, energy efficient lighting, and class-D
audio amplifiers with device performance many times greater than the
best silicon power MOSFETs. Visit our web site: www.epc-co.com.
Sign-up to receive EPC updates via email: http://bit.ly/EPCupdates
or text "EPC" to 22828
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eGaN is a registered trademark of Efficient Power Conversion
Corporation, Inc. All registered trademarks and other trademarks belong
to their respective owners.
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